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Investigation of Gallium Nitride devices benefits on LLC resonant DC-DC converter

This paper investigates the Gallium Nitride (GaN) devices benefits on the LLC resonant DC-DC converter. First, the relationship between the device parameters and converter current based on an analytical loss model of LLC resonant converter has been established. After that, the loss analysis and comparison between Si-based and GaN-based converter is presented. The GaN-based design demonstrates about 40% loss reduction compared with the Si-based design.

An insight on the extra winding loss due to the asymmetrical primary side and secondary side current is presented. The extra winding loss is reduced by 18% with GaN device application. The overall loss breakdown and the experimental result show the 20% overall loss reduction of the GaN-based LLC converter compared with the Si-based LLC converter.

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